FGH60N60SMD-F085

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Manufacturer part number:FGH60N60SMD-F085

Manufacturer:ON Semiconductor

Description:FGH60N60SMD-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH60N60SMD-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Rise Time-Max	60ns
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	600W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	42ns
JEDEC-95 Code	TO-247AB
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	120A
Power Dissipation-Max (Abs)	600W
Turn On Time	66 ns
Test Condition	400V, 60A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 60A
Turn Off Time-Nom (toff)	139 ns
IGBT Type	Field Stop
Gate Charge	280nC
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	22ns/116ns
Switching Energy	1.59mJ (on), 390μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	20ns
RoHS Status	ROHS3 Compliant