IRGP4263-EPBF

new-10%

Manufacturer part number:IRGP4263-EPBF

Manufacturer:Infineon Technologies

Description:IRGP4263-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4263-EPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Rise Time-Max	80ns
Element Configuration	Single
Input Type	Standard
Power - Max	300W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	90A
Collector Emitter Breakdown Voltage	650V
Test Condition	400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 48A
Gate Charge	150nC
Current - Collector Pulsed (Icm)	192A
Td (on/off) @ 25°C	70ns/140ns
Switching Energy	1.7mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7.7V
Fall Time-Max (tf)	50ns
Height	20.7mm
Length	15.87mm
Width	5.13mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free