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IRGP4263D1PBF

  • IRGP4263D1PBF
  • IRGP4263D1PBF

IRGP4263D1PBF

IRGP4263D1PBF

Infineon Technologies

IRGP4263D1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4263D1PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 325W
Reverse Recovery Time 170ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 90A
Test Condition 400V, 48A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 48A
Gate Charge 145nC
Current - Collector Pulsed (Icm) 192A
Td (on/off) @ 25°C 70ns/140ns
Switching Energy 2.9mJ (on), 1.4mJ (off)
RoHS Status RoHS Compliant
IRGP4263D1PBF Product Details

IRGP4263D1PBF Description


The IRGP4263D1PBF is a 600 V, 20 A IGBT with an anti-parallel diode in a TO-247AC package. 



IRGP4263D1PBF Features


  • Low VCE(ON) Trench IGBT Technology

  • Low switching losses

  • Maximum Junction temperature 175 °C

  • 5 μS short circuit SOA

  • Square RBSOA

  • 100% of the parts tested for 4X rated current (ILM)

  • Positive VCE(ON) Temperature coefficient

  • Ultra-fast soft Recovery Co-Pak Diode

  • Tight parameter distribution

  • Lead-Free Package



IRGP4263D1PBF Applications


  • Motor control and drives

  • Uninterruptible power supply (UPS)

  • Industrial heating and welding


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