SIGC81T60NCX1SA3 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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SIGC81T60NCX1SA3 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Published
2016
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
10
JESD-30 Code
S-XUUC-N10
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Dual Supply Voltage
600V
Current - Collector (Ic) (Max)
100A
Turn On Time
125 ns
Test Condition
300V, 100A, 2.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 100A
Turn Off Time-Nom (toff)
235 ns
IGBT Type
NPT
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
95ns/200ns
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
SIGC81T60NCX1SA3 Product Details
SIGC81T60NCX1SA3 Description
SIGC81T60NCX1SA3 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC81T60NCX1SA3 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC81T60NCX1SA3 has the common source configuration.