APT30GS60BRDLG

new-10%

Manufacturer part number:APT30GS60BRDLG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-247

Case Package:SOT-23

Datasheet:APT30GS60BRDLG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 3 weeks ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation	250W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	54A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	45 ns
Test Condition	400V, 30A, 9.1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.15V @ 15V, 30A
Turn Off Time-Nom (toff)	412 ns
IGBT Type	NPT
Gate Charge	145nC
Current - Collector Pulsed (Icm)	113A
Td (on/off) @ 25°C	16ns/360ns
Switching Energy	570μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant