IRGP4266-EPBF Description

The IRGP4266-EPBF is an IGBT 650 V 140 A 450 W Through Hole TO-247AD. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.

IRGP4266-EPBF Features

• Low VCE(ON) and switching Losses

• 5.5μs short circuit SOA

• Square RBSOA and Maximum Junction Temperature 175°C

• Positive VCE (ON) Temperature Coefficient

• Lead-Free, RoHS compliant

IRGP4266-EPBF Applications

• UPS

• Welding

• Industrial Motor Drive

• Inverters