IRGR4607DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGR4607DPBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
350.003213mg
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Power Dissipation
58W
Terminal Form
GULL WING
Reach Compliance Code
unknown
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
58W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.05V
Max Collector Current
11A
Reverse Recovery Time
48 ns
JEDEC-95 Code
TO-252AA
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.75V
Turn On Time
51 ns
Test Condition
400V, 4A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 4A
Turn Off Time-Nom (toff)
95 ns
Gate Charge
9nC
Current - Collector Pulsed (Icm)
12A
Td (on/off) @ 25°C
27ns/120ns
Switching Energy
140μJ (on), 62μJ (off)
Height
4.83mm
Length
10.67mm
Width
9.65mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
IRGR4607DPBF Product Details
IRGR4607DPBF Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.