92-0065 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
92-0065 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
160W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
60A
Vce(on) (Max) @ Vge, Ic
1.5V @ 15V, 31A
RoHS Status
Non-RoHS Compliant
92-0065 Product Details
92-0065 Description
The 92-0065 is an insulated gate bipolar transistor. IGBTs that have been optimized for medium-frequency applications have quick response times and offer the user the maximum efficiency possible. using FRED diodes that are optimized for IGBT performance. International Rectifier, IGBT Transistors.
With a wide range of IGBTs (Insulated-Gate Bipolar Transistors) available from 300V to 1200V, International Rectifier offers a variety of technologies that decrease switching and conduction losses to boost efficiency, lessen thermal issues, and enhance power density. The business also provides a wide selection of IGBT dies made especially for medium- to high-power modules. Solderable front metal (SFM) dies can be used to do away with bond wires and enable double-sided cooling for modules that require the greatest levels of reliability. This improves thermal performance, reliability, and efficiency.
92-0065 Features
Industry standard TO-220AB package
Lead-Free
Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs