IRGP4760D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGP4760D-EPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
325W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
325W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
90A
Reverse Recovery Time
170 ns
Collector Emitter Breakdown Voltage
650V
Test Condition
400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 48A
Gate Charge
145nC
Current - Collector Pulsed (Icm)
144A
Td (on/off) @ 25°C
70ns/140ns
Switching Energy
1.7mJ (on), 1mJ (off)
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.035000
$7.035
10
$6.636792
$66.36792
100
$6.261125
$626.1125
500
$5.906722
$2953.361
1000
$5.572379
$5572.379
IRGP4760D-EPBF Product Details
IRGP4760D-EPBF Description
IRGP4760D-EPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its 5.5μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications.