IXGH36N60B3C1

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Manufacturer part number:IXGH36N60B3C1

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXGH36N60B3C1 IGBT Single Transistor, 75 A, 1.8 V, 250 W, 600 V, TO-247, 3

Case Package:SOT-23

Datasheet:IXGH36N60B3C1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Base Part Number	IXG*36N60
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	250W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Turn On Time	47 ns
Test Condition	400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 30A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
Gate Charge	80nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	20ns/125ns
Switching Energy	390μJ (on), 800μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	160ns
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant