HGTG20N60A4 Description

The HGTG20N60A4 combines the advantages of a MOSFET's high input impedance with a bipolar transistor's low on-state conduction loss. This HGTG20N60A4 IGBT is suited for a variety of high-voltage switching applications requiring low conduction losses at high frequencies. The HGTG20N60A4 is designed for high-speed switching applications such as UPS, welding, and induction heating.

HGTG20N60A4 Features

• 40 A, 600 V @ TC = 110°C

• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A

• Typical Fall Time: 55 ns at TJ = 125°C

• Low Conduction Loss

• This is a Pb?Free Device

HGTG20N60A4 Applications

• UPS

• Welder

• Other Industrial