IRGP6650D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGP6650D-EPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.500007g
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
306W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Input Type
Standard
Power - Max
306W
Collector Emitter Voltage (VCEO)
1.95V
Max Collector Current
80A
Reverse Recovery Time
50 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.65V
Test Condition
400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 35A
Gate Charge
75nC
Current - Collector Pulsed (Icm)
105A
Td (on/off) @ 25°C
40ns/105ns
Switching Energy
300μJ (on), 630μJ (off)
RoHS Status
RoHS Compliant
IRGP6650D-EPBF Product Details
IRGP6650D-EPBF Description
The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.
IRGP6650D-EPBF Applications
· Welding
· H Bridge Converters
IRGP6650D-EPBF Features
Low VCE(ON) and Switching Losses
Optimized Diode for Full Bridge Hard Switch Converters