STGP18N40LZ

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Manufacturer part number:STGP18N40LZ

Manufacturer:STMicroelectronics

Description:STGP18N40LZ datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP18N40LZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	VOLTAGE CLAMPING
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Base Part Number	STGP18
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Logic
Turn On Delay Time	650 ns
Power - Max	150W
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	14.2 μs
Collector Emitter Voltage (VCEO)	360V
Max Collector Current	30A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	420V
Turn On Time	4450 ns
Test Condition	300V, 10A, 5V
Vce(on) (Max) @ Vge, Ic	1.7V @ 4.5V, 10A
Turn Off Time-Nom (toff)	22200 ns
Gate Charge	29nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	650ns/13.5μs
Gate-Emitter Voltage-Max	16V
Gate-Emitter Thr Voltage-Max	2.3V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free