RJH60F7ADPK-00#T0 Description

RJH60F7ADPK-00#T0 developed by Renesas Electronics America is a type of Silicon N Channel IGBT with a built-in fast recovery diode in one package. It is specifically designed based on a Trench gate and thin wafer technology. It is characterized by high-speed power switching, VCE(sat) = 1.35 V typ., and a low collector-to-emitter saturation voltage.

RJH60F7ADPK-00#T0 Features

Collector to emitter voltage: 600 V

Gate to emitter voltage: ±30 V

Low collector to the emitter saturation voltage 

Built-in fast recovery diode in one package 

RJH60F7ADPK-00#T0 Applications

Industrial applications

Home appliances

Electronics applications