IRGP6690D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGP6690D-EPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.500007g
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
483W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Input Type
Standard
Power - Max
483W
Collector Emitter Voltage (VCEO)
1.95V
Max Collector Current
140A
Reverse Recovery Time
90 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.65V
Test Condition
400V, 75A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 75A
Gate Charge
140nC
Current - Collector Pulsed (Icm)
225A
Td (on/off) @ 25°C
85ns/222ns
Switching Energy
2.4mJ (on), 2.2mJ (off)
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRGP6690D-EPBF Product Details
IRGP6690D-EPBF Description
IRGP6690D-EPBF transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP6690D-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGP6690D-EPBF has the common source configuration.