IRG4BC30S-S

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Manufacturer part number:IRG4BC30S-S

Manufacturer:Infineon Technologies

Description:IRG4BC30S-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC30S-S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	34A
Power Dissipation-Max (Abs)	100W
Turn On Time	40 ns
Test Condition	480V, 18A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 18A
Turn Off Time-Nom (toff)	1550 ns
Gate Charge	50nC
Current - Collector Pulsed (Icm)	68A
Td (on/off) @ 25°C	22ns/540ns
Switching Energy	260μJ (on), 3.45mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	590ns
RoHS Status	Non-RoHS Compliant