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IXSX80N60B

IXSX80N60B

IXSX80N60B

IXYS

IGBT 600V 160A 500W PLUS247

SOT-23

IXSX80N60B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 7.300002g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW SATURATION VOLTAGE
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXS*80N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 500W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 160A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 120 ns
Test Condition 480V, 80A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 80A
Turn Off Time-Nom (toff) 450 ns
IGBT Type PT
Gate Charge 240nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 60ns/140ns
Switching Energy 4.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8V
RoHS Status RoHS Compliant

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