IXRP15N120

new-10%

Manufacturer part number:IXRP15N120

Manufacturer:IXYS

Description:IGBT 1200V 25A 300W TO220

Case Package:SOT-23

Datasheet:IXRP15N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.95V
Max Collector Current	25A
Reverse Recovery Time	300 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	33.5 ns
Test Condition	600V, 10A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.95V @ 15V, 10A
Turn Off Time-Nom (toff)	253 ns
IGBT Type	NPT
Gate Charge	36nC
Switching Energy	1.1mJ (on), 130μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	RoHS Compliant