IRGR4045DTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGR4045DTRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
77W
Base Part Number
IRGR4045
Rise Time-Max
15ns
Element Configuration
Single
Input Type
Standard
Power - Max
77W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
12A
Reverse Recovery Time
74 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.7V
Test Condition
400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 6A
IGBT Type
Trench
Gate Charge
19.5nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
27ns/75ns
Switching Energy
56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
22ns
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.92000
$0.92
500
$0.9108
$455.4
1000
$0.9016
$901.6
1500
$0.8924
$1338.6
2000
$0.8832
$1766.4
2500
$0.874
$2185
IRGR4045DTRPBF Product Details
IRGR4045DTRPBF Description
IRGR4045DTRPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGR4045DTRPBF is suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGR4045DTRPBF is in the D-Pak package with 77W power dissipation.