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IRGR4045DTRPBF

IRGR4045DTRPBF

IRGR4045DTRPBF

Infineon Technologies

IRGR4045DTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGR4045DTRPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 77W
Base Part Number IRGR4045
Rise Time-Max 15ns
Element Configuration Single
Input Type Standard
Power - Max 77W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 12A
Reverse Recovery Time 74 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Test Condition 400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
IGBT Type Trench
Gate Charge 19.5nC
Current - Collector Pulsed (Icm) 18A
Td (on/off) @ 25°C 27ns/75ns
Switching Energy 56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 22ns
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.92000 $0.92
500 $0.9108 $455.4
1000 $0.9016 $901.6
1500 $0.8924 $1338.6
2000 $0.8832 $1766.4
2500 $0.874 $2185
IRGR4045DTRPBF Product Details

IRGR4045DTRPBF Description


IRGR4045DTRPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGR4045DTRPBF is suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses.  The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGR4045DTRPBF  is in the D-Pak package with 77W power dissipation. 



IRGR4045DTRPBF Features


Low VCE (on) Trench IGBT Technology

Low Switching Losses

Maximum Junction temperature 175 °C

5μs SCSOA

Square RBSOA

100% of the parts tested for ILM

Positive VCE (on) Temperature Coefficient.

Ultra Fast Soft Recovery Co-Pak Diode

Tighter Distribution of Parameters

Lead-Free, RoHS Compliant



IRGR4045DTRPBF Applications


Automotive 

Advanced driver assistance systems (ADAS) 

Communications equipment 

Wireless infrastructure 

Enterprise systems 

Enterprise machine


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