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SGR15N40LTM

SGR15N40LTM

SGR15N40LTM

ON Semiconductor

SGR15N40LTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGR15N40LTM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 400V
Max Power Dissipation 45W
Current Rating 130A
Element Configuration Single
Input Type Standard
Collector Emitter Voltage (VCEO) 8V
Collector Emitter Breakdown Voltage 400V
Vce(on) (Max) @ Vge, Ic 8V @ 4.5V, 130A
IGBT Type Trench
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.798480 $4.79848
10 $4.526868 $45.26868
100 $4.270630 $427.063
500 $4.028896 $2014.448
1000 $3.800846 $3800.846
SGR15N40LTM Product Details

SGR15N40LTM Description

 

SGR15N40LTM transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SGR15N40LTM MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor SGR15N40LTM has the common source configuration.

 

 

SGR15N40LTM Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

SGR15N40LTM Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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