IXYT80N90C3

new-10%

Manufacturer part number:IXYT80N90C3

Manufacturer:IXYS

Description:IGBT 900V 165A 830W TO268

Case Package:SOT-23

Datasheet:IXYT80N90C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	830W
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	unknown
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	830W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	165A
Collector Emitter Breakdown Voltage	900V
Turn On Time	134 ns
Test Condition	450V, 80A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 80A
Turn Off Time-Nom (toff)	201 ns
Gate Charge	145nC
Current - Collector Pulsed (Icm)	360A
Td (on/off) @ 25°C	34ns/90ns
Switching Energy	4.3mJ (on), 1.9mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free