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IXYT80N90C3

IXYT80N90C3

IXYT80N90C3

IXYS

IGBT 900V 165A 830W TO268

SOT-23

IXYT80N90C3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX3™, XPT™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 830W
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code unknown
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 830W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 165A
Collector Emitter Breakdown Voltage 900V
Turn On Time 134 ns
Test Condition 450V, 80A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 80A
Turn Off Time-Nom (toff) 201 ns
Gate Charge 145nC
Current - Collector Pulsed (Icm) 360A
Td (on/off) @ 25°C 34ns/90ns
Switching Energy 4.3mJ (on), 1.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.609000 $10.609
10 $10.008491 $100.08491
100 $9.441972 $944.1972
500 $8.907521 $4453.7605
1000 $8.403322 $8403.322

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