IRG4RC10KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4RC10KDPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Supplier Device Package
D-Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
38W
Current Rating
9A
Base Part Number
IRG4RC10KDPBF
Element Configuration
Single
Power Dissipation
38W
Input Type
Standard
Power - Max
38W
Collector Emitter Voltage (VCEO)
2.62V
Max Collector Current
9A
Reverse Recovery Time
28 ns
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
9A
Collector Emitter Saturation Voltage
2.62V
Test Condition
480V, 5A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.62V @ 15V, 5A
Gate Charge
19nC
Current - Collector Pulsed (Icm)
18A
Td (on/off) @ 25°C
49ns/97ns
Switching Energy
250μJ (on), 140μJ (off)
Height
2.39mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.604361
$0.604361
10
$0.570151
$5.70151
100
$0.537879
$53.7879
500
$0.507433
$253.7165
1000
$0.478710
$478.71
IRG4RC10KDPBF Product Details
IRG4RC10KDPBF Description
IRG4RC10KDPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4RC10KDPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4RC10KDPBF has the common source configuration.