IRGS4715DTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGS4715DTRLPBF Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
100W
Reach Compliance Code
unknown
Input Type
Standard
Power - Max
100W
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
21A
Reverse Recovery Time
86 ns
Collector Emitter Breakdown Voltage
650V
Test Condition
400V, 8A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 8A
Gate Charge
30nC
Current - Collector Pulsed (Icm)
24A
Td (on/off) @ 25°C
30ns/100ns
Switching Energy
200μJ (on), 90μJ (off)
RoHS Status
RoHS Compliant
IRGS4715DTRLPBF Product Details
IRGS4715DTRLPBF Description
IRGS4715DTRLPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its 5.5μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, it provides increased reliability based on the maximum junction temperature rated at 175°C.