IXBT20N300

new-10%

Manufacturer part number:IXBT20N300

Manufacturer:IXYS

Description:IGBT 3000V 50A 250W TO268

Case Package:SOT-23

Datasheet:IXBT20N300 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	BIMOSFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.2V
Max Collector Current	50A
Reverse Recovery Time	1.35 μs
Collector Emitter Breakdown Voltage	3kV
Voltage - Collector Emitter Breakdown (Max)	3000V
Turn On Time	608 ns
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 20A
Turn Off Time-Nom (toff)	695 ns
Gate Charge	105nC
Current - Collector Pulsed (Icm)	140A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant