STGP19NC60WD

new-10%

Manufacturer part number:STGP19NC60WD

Manufacturer:STMicroelectronics

Description:STGP19NC60WD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP19NC60WD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	125W
Base Part Number	STGP19
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	125W
Input Type	Standard
Turn On Delay Time	25 ns
Transistor Application	POWER CONTROL
Rise Time	7ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	90 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	31ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	33 ns
Test Condition	390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 12A
Turn Off Time-Nom (toff)	204 ns
Gate Charge	53nC
Td (on/off) @ 25°C	25ns/90ns
Switching Energy	81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free