IRGS6B60KTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGS6B60KTRLPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
260.39037mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Power Dissipation
90W
Terminal Form
GULL WING
Base Part Number
IRGS6B60KPBF
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
90W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
13A
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Turn On Time
45 ns
Test Condition
400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 5A
Turn Off Time-Nom (toff)
258 ns
IGBT Type
NPT
Gate Charge
18.2nC
Current - Collector Pulsed (Icm)
26A
Td (on/off) @ 25°C
25ns/215ns
Switching Energy
110μJ (on), 135μJ (off)
Height
4.699mm
Length
10.668mm
Width
9.652mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$1.34119
$1072.952
IRGS6B60KTRLPBF Product Details
IRGS6B60KTRLPBF Description
IRGS6B60KTRLPBF is a 600V insulated gate bipolar transistor. The Infineon IRGS6B60KTRLPBF can be applied in Automotive, Advanced driver assistance systems (ADAS), Communications equipment, Wired networking, Enterprise systems, and Datacenter & enterprise computing. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGS6B60KTRLPBF is in the TO-220AB package with 90W power dissipation.