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IRGS6B60KTRLPBF

IRGS6B60KTRLPBF

IRGS6B60KTRLPBF

Infineon Technologies

IRGS6B60KTRLPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGS6B60KTRLPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 260.39037mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Power Dissipation 90W
Terminal Form GULL WING
Base Part Number IRGS6B60KPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 13A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 45 ns
Test Condition 400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
Turn Off Time-Nom (toff) 258 ns
IGBT Type NPT
Gate Charge 18.2nC
Current - Collector Pulsed (Icm) 26A
Td (on/off) @ 25°C 25ns/215ns
Switching Energy 110μJ (on), 135μJ (off)
Height 4.699mm
Length 10.668mm
Width 9.652mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $1.34119 $1072.952
IRGS6B60KTRLPBF Product Details

IRGS6B60KTRLPBF Description


IRGS6B60KTRLPBF is a 600V insulated gate bipolar transistor. The Infineon IRGS6B60KTRLPBF can be applied in Automotive, Advanced driver assistance systems (ADAS), Communications equipment, Wired networking, Enterprise systems, and Datacenter & enterprise computing. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGS6B60KTRLPBF is in the TO-220AB package with 90W power dissipation.



IRGS6B60KTRLPBF Features


Low VCE (on) Non-Punch Through IGBT Technology

10μs Short Circuit Capability

Square RBSOA

Positive VCE (on) Temperature Coefficient

Benchmark Efficiency for Motor Control

Rugged Transient Performance

Low EMI

Excellent Current Sharing in Parallel Operation



IRGS6B60KTRLPBF Applications


Automotive 

Advanced driver assistance systems (ADAS) 

Communications equipment 

Wired networking 

Enterprise systems 

Datacenter & enterprise computing


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