IRGS4B60KD1TRLP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGS4B60KD1TRLP Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
260.39037mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Max Power Dissipation
63W
Terminal Form
GULL WING
Base Part Number
IRGS4B60KD1PBF
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
63W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
11A
Reverse Recovery Time
93 ns
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Turn On Time
40 ns
Test Condition
400V, 4A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 4A
Turn Off Time-Nom (toff)
199 ns
IGBT Type
NPT
Gate Charge
12nC
Current - Collector Pulsed (Icm)
22A
Td (on/off) @ 25°C
22ns/100ns
Switching Energy
73μJ (on), 47μJ (off)
Radiation Hardening
No
RoHS Status
RoHS Compliant
IRGS4B60KD1TRLP Product Details
IRGS4B60KD1TRLP Description
IRGS4B60KD1TRLP is a single IGBT with a breakdown voltage of 600V from Infineon Technologies. SIGC100T60R3EX1SA4 operates between -55°C~175°C TJ, and its Current - Collector (Ic) (Max) is 11A. The IRGS4B60KD1TRLP has 3 pins and it is available in Tape & Reel (TR) packaging way. IRGS4B60KD1TRLP has a 600V Voltage - Collector Emitter Breakdown (Max) value.