IXER35N120D1

new-10%

Manufacturer part number:IXER35N120D1

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXER35N120D1 IGBT Single Transistor, 50 A, 2.2 V, 200 W, 1.2 kV, ISOPLUS-247, 3 Pins

Case Package:SOT-23

Datasheet:IXER35N120D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	247
Weight	5.3g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	50A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	200W
Case Connection	ISOLATED
Input Type	Standard
Turn On Delay Time	85 ns
Transistor Application	POWER CONTROL
Rise Time	50ns
Turn-Off Delay Time	440 ns
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	50A
Reverse Recovery Time	80 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.2V
Turn On Time	135 ns
Test Condition	600V, 35A, 39 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 35A
Turn Off Time-Nom (toff)	490 ns
IGBT Type	NPT
Gate Charge	150nC
Switching Energy	5.4mJ (on), 2.6mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free