IRGSL4B60KD1PBF

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Manufacturer part number:IRGSL4B60KD1PBF

Manufacturer:Infineon Technologies

Description:IRGSL4B60KD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGSL4B60KD1PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	ULTRA FAST SOFT RECOVERY
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	63W
Peak Reflow Temperature (Cel)	260
Current Rating	11A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Element Configuration	Single
Power Dissipation	63W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	18ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	11A
Reverse Recovery Time	93 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	40 ns
Test Condition	400V, 4A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 4A
Turn Off Time-Nom (toff)	199 ns
IGBT Type	NPT
Gate Charge	12nC
Current - Collector Pulsed (Icm)	22A
Td (on/off) @ 25°C	22ns/100ns
Switching Energy	73μJ (on), 47μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	89ns
Height	9.652mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free