IRL2505L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRL2505L Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package
TO-262
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1998
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
3.8W Ta 200W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
8mOhm @ 54A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
104A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 5V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
RoHS Status
Non-RoHS Compliant
IRL2505L Product Details
IRL2505L Description
IRL2505L is a 55V HEXFET? Power MOSFET manufactured by Infineon. The Fifth Generation HEXFET IRL2505L from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.