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IRL2505L

IRL2505L

IRL2505L

Infineon Technologies

IRL2505L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRL2505L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package TO-262
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.8W Ta 200W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8mOhm @ 54A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 104A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 5V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
RoHS Status Non-RoHS Compliant
IRL2505L Product Details

IRL2505L Description


IRL2505L is a 55V HEXFET? Power MOSFET manufactured by Infineon. The Fifth Generation  HEXFET IRL2505L from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.



IRL2505L Features


  • Logic-Level Gate Drive

  • Advanced Process Technology

  • Low-profile through-hole (IRL 2505L)

  • 175°C Operating Temperature

  • Fast Switching



IRL2505L Applications


  • Advanced driver assistance systems (ADAS)

  • Body electronics & lighting

  • Hybrid, electric & power

  • train systems

  • Infotainment & cluster


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