APT8M80K

new-10%

Manufacturer part number:APT8M80K

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 800V 8A TO-220

Case Package:SOT-23

Datasheet:APT8M80K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	POWER MOS 8™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	FAST SWITCHING, AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	8A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	Single
Power Dissipation-Max	225W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	225W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.35 Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	1335pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	8A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	45A
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	25A
Avalanche Energy Rating (Eas)	285 mJ
Height	9.19mm
Length	10.26mm
Width	4.72mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free