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IRL3716STRLPBF

IRL3716STRLPBF

IRL3716STRLPBF

Infineon Technologies

MOSFET N-CH 20V 180A D2PAK

SOT-23

IRL3716STRLPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 210W Tc
Element Configuration Single
Power Dissipation 210W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5090pF @ 10V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 79nC @ 4.5V
Rise Time 140ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 5.09nF
Drain to Source Resistance 4mOhm
Rds On Max 4 mΩ
Nominal Vgs 3 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant

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