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BSS123LT3G

BSS123LT3G

BSS123LT3G

ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23

SOT-23

BSS123LT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 170mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 225mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 225mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 170mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 6Ohm
Drain to Source Breakdown Voltage 100V
RoHS Status RoHS Compliant
Lead Free Lead Free

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