IRF7420PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7420PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
14MOhm
Voltage - Rated DC
-12V
Technology
MOSFET (Metal Oxide)
Current Rating
-11.5A
Number of Elements
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Power Dissipation
2.5W
Turn On Delay Time
8.8 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
14m Ω @ 11.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3529pF @ 10V
Current - Continuous Drain (Id) @ 25°C
11.5A Tc
Gate Charge (Qg) (Max) @ Vgs
38nC @ 4.5V
Rise Time
8.8ns
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
225 ns
Turn-Off Delay Time
291 ns
Continuous Drain Current (ID)
-11.5A
Threshold Voltage
-900mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-12V
Dual Supply Voltage
-12V
Nominal Vgs
-900 mV
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IRF7420PBF Product Details
IRF7420PBF Description
The exceptionally low on-resistance per silicon area of these P-Channel HEXFET Power MOSFETs from International Rectifier is made possible by cutting-edge manufacturing procedures. This advantage gives the designer access to a highly effective tool for use in load and battery management applications.
The SO-8 has been altered by way of a unique leadframe, resulting in improved thermal properties and multiple-die capabilities, making it perfect for a range of power applications. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering.