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SI1046R-T1-GE3

SI1046R-T1-GE3

SI1046R-T1-GE3

Vishay Siliconix

MOSFET 20V 606mA 0.25W 420mohm @ 4.5V

SOT-23

SI1046R-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75A
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 420m Ω @ 606mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 66pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.49nC @ 5V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 606mA
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.42Ohm
Drain to Source Breakdown Voltage 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant

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