IRL6372TRPBF

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IRL6372TRPBF

Manufacturer part number:IRL6372TRPBF

Manufacturer:Infineon Technologies

Description:IRL6372TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRL6372TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	17.9MOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	2W
Terminal Form	GULL WING
Base Part Number	IRL6372PBF
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	5.9 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17.9m Ω @ 8.1A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	8.1A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	65A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1.1 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free