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TT8J13TCR

TT8J13TCR

TT8J13TCR

ROHM Semiconductor

MOSFET 2P-CH 12V 2.5A TSST8

SOT-23

TT8J13TCR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2011
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 62m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Continuous Drain Current (ID) 2.5A
Drain-source On Resistance-Max 0.062Ohm
Pulsed Drain Current-Max (IDM) 5A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 1.5V Drive
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.370350 $1.37035
10 $1.292783 $12.92783
100 $1.219607 $121.9607
500 $1.150572 $575.286
1000 $1.085446 $1085.446

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