IRLB4030PBF

new-10%

IRLB4030PBF

Manufacturer part number:IRLB4030PBF

Manufacturer:Infineon Technologies

Description:IRLB4030PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLB4030PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	4.3MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	370W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	370W
Turn On Delay Time	74 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.3m Ω @ 110A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11360pF @ 50V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 4.5V
Rise Time	330ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	170 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	180A
Threshold Voltage	2.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Nominal Vgs	2.5 V
Height	15.24mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free