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FDY100PZ

FDY100PZ

FDY100PZ

ON Semiconductor

FDY100PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDY100PZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 1.2Ohm
Terminal Finish Tin (Sn)
Additional FeatureESD PROTECTION
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormFLAT
Number of Elements 1
Power Dissipation-Max 625mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation625mW
Turn On Delay Time6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 10V
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Rise Time13ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 350mA
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Nominal Vgs -1 V
Height 780μm
Length 1.7mm
Width 980μm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:12839 items

Pricing & Ordering

QuantityUnit PriceExt. Price

FDY100PZ Product Details

FDY100PZ Description


FDY100PZ belongs to the family of single P-channel PowerTrench? MOSFETs which are provided by ON Semiconductor based on the advanced power trench process to optimize the RDS (on) @ VGS = 2.5 V. Due to its specific features, it is ideally suitable for Li-lon battery pack.



FDY100PZ Features


  • Advanced power trench process

  • ESD protection diode

  • RoHS compliant



FDY100PZ Applications


  • Li-lon battery pack


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