IXTU01N100

new-10%

Manufacturer part number:IXTU01N100

Manufacturer:IXYS

Description:MOSFET N-CH 1KV .1A I-PAK

Case Package:SOT-23

Datasheet:IXTU01N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Current Rating	100mA
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	25W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	54pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100mA Tc
Gate Charge (Qg) (Max) @ Vgs	6.9nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	100mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.1A
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	0.4A
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free