Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRLI530N

IRLI530N

IRLI530N

Infineon Technologies

IRLI530N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLI530N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 41W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.12Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 150 mJ
RoHS Status Non-RoHS Compliant
IRLI530N Product Details

IRLI530N Description


The IRLI530NP is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The package eliminates the need for additional insulating hardware. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100-micron mica barrier. The package is mounted to a heat sink using a single clip or by a single screw fixing.



IRLI530N Features


  • Logic level gate drive

  • Advanced process technology

  • Isolated package

  • Fully avalanche rating

  • Low static drain-to-source ON-resistance

  • Logic level



IRLI530N Applications


  • Commercial

  • Industrial

  • Power Management

  • Induction furnaces

  • Arc furnaces and arc welders

  • Steel rolling mills

  • Large motors with periodic loading

  • Thyristor drives


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News