IRLI540N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLI540N Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1998
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
54W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
44m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
23A Tc
Gate Charge (Qg) (Max) @ Vgs
74nC @ 5V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
23A
Drain-source On Resistance-Max
0.053Ohm
Pulsed Drain Current-Max (IDM)
120A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
310 mJ
RoHS Status
Non-RoHS Compliant
IRLI540N Product Details
IRLI540N Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
with a highly efficient and reliable device for use in various applications.