SISA18DN-T1-GE3

new-10%

Manufacturer part number:SISA18DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V 38.3A 19.8W 7.5mohm @ 10V G4

Case Package:SOT-23

Datasheet:SISA18DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Supplier Device Package	PowerPAK® 1212-8
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2012
Series	TrenchFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	7.5mOhm
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	3.2W Ta 19.8W Tc
Turn On Delay Time	22 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	38.3A Tc
Gate Charge (Qg) (Max) @ Vgs	21.5nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+20V, -16V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	38.3A
Gate to Source Voltage (Vgs)	2.4V
Drain to Source Breakdown Voltage	30V
Input Capacitance	1nF
Drain to Source Resistance	7.5mOhm
Rds On Max	7.5 mΩ
RoHS Status	ROHS3 Compliant