FDMS8670S

new-10%

Manufacturer part number:FDMS8670S

Manufacturer:ON Semiconductor

Description:FDMS8670S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS8670S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	68.1mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®, SyncFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	3.5MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Current Rating	42A
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Power Dissipation-Max	2.5W Ta 78W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs	73nC @ 10V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	42A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	20A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	200A
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free