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IRLML0100TRPBF

IRLML0100TRPBF

IRLML0100TRPBF

Infineon Technologies

IRLML0100TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLML0100TRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 220MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Qualification StatusNot Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation1.3W
Turn On Delay Time2.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time2.1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 1.6A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 7A
Recovery Time 30 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2.5 V
Height 1.12mm
Length 3.0226mm
Width 1.397mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14805 items

Pricing & Ordering

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IRLML0100TRPBF Product Details

IRLML0100TRPBF Description


The IRLML0100TRPBF is an N-channel HEXFET? Power MOSFET for load/system switch. The StrongIRFET? power MOSFET IRLML0100TRPBF is optimized for low RDS(on) and high current capability. The IRLML0100TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. The IRLML0100TRPBF is offered in the SOT-23-3 package. It is specified for operation from –55°C to +150°C.



IRLML0100TRPBF Features


  • Industry-standard surface-mount power package

  • Product qualification according to JEDEC standard

  • Silicon optimized for applications switching below <100 kHz

  • Softer body-diode compared to previous silicon generation

  • In the SOT-23-3 package



IRLML0100TRPBF Applications


  • Battery protection

  • SMPS

  • DC switch

  • Load switch

  • Inverters


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