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IRLML0100TRPBF

IRLML0100TRPBF

IRLML0100TRPBF

Infineon Technologies

IRLML0100TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLML0100TRPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 220MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 2.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time 2.1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 1.6A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 7A
Recovery Time 30 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2.5 V
Height 1.12mm
Length 3.0226mm
Width 1.397mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.18124 $0.54372
6,000 $0.16955 $1.0173
15,000 $0.15786 $2.3679
30,000 $0.14967 $4.4901
IRLML0100TRPBF Product Details

IRLML0100TRPBF Description


The IRLML0100TRPBF is an N-channel HEXFET? Power MOSFET for load/system switch. The StrongIRFET? power MOSFET IRLML0100TRPBF is optimized for low RDS(on) and high current capability. The IRLML0100TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. The IRLML0100TRPBF is offered in the SOT-23-3 package. It is specified for operation from –55°C to +150°C.



IRLML0100TRPBF Features


  • Industry-standard surface-mount power package

  • Product qualification according to JEDEC standard

  • Silicon optimized for applications switching below <100 kHz

  • Softer body-diode compared to previous silicon generation

  • In the SOT-23-3 package



IRLML0100TRPBF Applications


  • Battery protection

  • SMPS

  • DC switch

  • Load switch

  • Inverters


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