IRLML2060TRPBF

new-10%

Manufacturer part number:IRLML2060TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 1.2A SOT23-3

Case Package:SOT-23

Datasheet:IRLML2060TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	480MOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	1.25W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	4.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	480m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	64pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.2A Ta
Gate Charge (Qg) (Max) @ Vgs	0.67nC @ 4.5V
Rise Time	3.8ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	2.8 ns
Turn-Off Delay Time	3.7 ns
Continuous Drain Current (ID)	1.2A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	4.8A
Recovery Time	21 ns
Height	1.016mm
Length	3.0226mm
Width	1.397mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free