IXTK46N50L

new-10%

Manufacturer part number:IXTK46N50L

Manufacturer:IXYS

Description:MOSFET N-CH 500V 46A TO-264

Case Package:SOT-23

Datasheet:IXTK46N50L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	160MOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	700W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	DRAIN
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 500mA, 20V
Vgs(th) (Max) @ Id	6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	46A Tc
Gate Charge (Qg) (Max) @ Vgs	260nC @ 15V
Rise Time	50ns
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	±30V
Fall Time (Typ)	42 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	46A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	100A
Avalanche Energy Rating (Eas)	1500 mJ
Height	26.16mm
Length	19.96mm
Width	5.13mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free