IRLML6302TR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLML6302TR Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Packaging
Cut Tape (CT)
Published
2004
Series
HEXFET®
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
540mW
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-620mA
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Power Dissipation
540mW
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
600m Ω @ 610mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
97pF @ 15V
Current - Continuous Drain (Id) @ 25°C
780mA Ta
Gate Charge (Qg) (Max) @ Vgs
3.6nC @ 4.45V
Rise Time
22ns
Drain to Source Voltage (Vdss)
20V
Continuous Drain Current (ID)
780mA
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
0.78A
Drain-source On Resistance-Max
0.6Ohm
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
IRLML6302TR Product Details
IRLML6302TR Description
IRLML6302TR is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of IRLML6302TR is -55°C~150°C and its maximum power dissipation is 540mW. IRLML6302TR has 3 pins and it is available in Cut Tape (CT) packaging way. The Drain to Source Voltage (Vdss) of IRLML6302TR is 20V and its Gate to Source Voltage (Vgs) is 12V.