IRFI820G

new-10%

Manufacturer part number:IRFI820G

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 2.1A TO220FP

Case Package:SOT-23

Datasheet:IRFI820G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Number of Pins	3
Supplier Device Package	TO-220-3
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Power Dissipation	30W
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.1A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	8.6ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	2.1A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	360pF
Drain to Source Resistance	3Ohm
Rds On Max	3 Ω
Height	9.8mm
Length	10.63mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant