MMFT960T1G

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Manufacturer part number:MMFT960T1G

Manufacturer:ON Semiconductor

Description:MMFT960T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MMFT960T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	1.7Ohm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	300mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Power Dissipation-Max	800mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	800mW
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.7 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	65pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Tc
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	300mA
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	0.3A
Drain to Source Breakdown Voltage	60V
Nominal Vgs	1 V
Height	1.65mm
Length	6.7mm
Width	3.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free